IPD80R4K5P7ATMA1, Транзистор N-МОП, полевой, 800В, 1А, 13Вт, PG-TO252-3, CoolMOS™
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- Код товара
- 8070167849
- Артикул
- IPD80R4K5P7ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type
- 1PCSNChannel
- Brand:
- Infineon Technologies
- Military
- No
- Pin Count
- 3
Цена по запросу
(от 88,55 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 800 В, 1,5 А, TO-252; Полярность транзистора: N-канальный; Постоянный ток стока Id: 1,5 А; Напряжение источника стока Vds: 800 В; Сопротивление включения Rds(on): 3,8 Ом; Испытательное напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:3В; Мощность
Технические параметры
| Type | 1PCSNChannel |
| Brand: | Infineon Technologies |
| Military | No |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 80 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 15 ns |
| Вес, г | 0.75 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | PG-TO252-3 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPD80R4K5P7 SP001422632 |
| Supplier Package | TO-252 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4 nC |
| Process Technology | CoolMOS P7 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 13W |
| Pd - Power Dissipation: | 13 W |
| Total Gate Charge (Qg@Vgs) | 4nC@10V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Input Capacitance (Ciss@Vds) | 80pF@500V |
| Typical Turn-Off Delay Time: | 60 ns |
| Continuous Drain Current (Id) | 1.5A |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Power Dissipation - (mW) | 13000 |
| Typical Gate Charge @ 10V - (nC) | 4 |
| Typical Gate Charge @ Vgs - (nC) | 4@10V |
| Maximum Gate Source Voltage - (V) | 20 |
| Rds On - Drain-Source Resistance: | 4.5 Ohms |
| Maximum Drain Source Voltage - (V) | 800 |
| Maximum Gate Threshold Voltage - (V) | 3.5 |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Maximum Continuous Drain Current - (A) | 1.5 |
| Typical Input Capacitance @ Vds - (pF) | 80@500V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Drain Source Resistance - (mOhm) | 4500@10V |