IPD80R2K0P7ATMA1, MOSFET транзистор PG-TO252-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070138962
- Артикул
- IPD80R2K0P7ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Series
- 800V CoolMOS™ P7
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 104,46 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Серия МОП-транзисторов Infineon 800V Cool MOS™ P7 super junction идеально подxодит для маломощныx SMPS-устройств, полностью удовлетворяя потребности рынка в производительности, простоте использования и соотношении цена/качество.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Series | 800V CoolMOS™ P7 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.37 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Material | Si |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 8 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation (mW) | 24000 |
| Typical Gate Charge @ 10V (nC) | 9 |
| Typical Gate Charge @ Vgs (nC) | 9@10V |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Typical Gate to Drain Charge (nC) | 4 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Typical Input Capacitance @ Vds (pF) | 175@500V |
| Maximum Drain Source Resistance (mOhm) | 2000@10V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |