IPD70P04P409ATMA1, Trans MOSFET P-CH 40V 73A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001484328
- Артикул
- IPD70P04P409ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 175 ₽)
Минимальный заказ: 439 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 40V 73A 3-контактный (2+Tab) DPAK T/R Автомобильный AEC-Q101
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| Структура | MOSFET |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 12 |
| Особенности | автомобильные приложения |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 75000 |
| Typical Gate Charge @ 10V (nC) | 54 |
| Typical Gate Charge @ Vgs (nC) | 54@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1400 |
| Typical Turn-On Delay Time (ns) | 19 |
| Maximum Drain-Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 73 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3700@25V |
| Maximum Drain-Source Resistance (mOhm) | 8.9@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 292 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 6.4@10V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 409 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |