IPD60R600C6ATMA1, MOSFETs N-Ch 600V 20.2A DPAK-2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070233419
- Артикул
- IPD60R600C6ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- CoolMOS C6
- Fall Time:
- 13 ns
- Rise Time:
- 9 ns
Цена по запросу
(от 138,61 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | CoolMOS C6 |
| Fall Time: | 13 ns |
| Rise Time: | 9 ns |
| Tradename: | CoolMOS |
| Вес, г | 0.33 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD60R600C6 SP001117726 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 63 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 80 ns |
| Id - Continuous Drain Current: | 7.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 540 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |