CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014681452
- Артикул
- IPD50R650CEAUMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- CoolMOS™ CE
- Series:
- CoolMOS CE
- Military
- No
Цена по запросу
(от 194,02 ₽)
Минимальный заказ: 25 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon CoolMOS - это революционная теxнология для высоковольтныx силовыx МОП-транзисторов, разработанная в соответствии с принципом super junction (SJ) и впервые разработанная компанией Infineon Technologies.
Технические параметры
| Brand: | Infineon Technologies |
| Series | CoolMOS™ CE |
| Series: | CoolMOS CE |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 13 ns |
| Rise Time: | 5 ns |
| Tradename: | CoolMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-252 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD50R650CE SP001396796 |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Структура | N-Channel |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 69 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 500 V |
| Typical Turn-Off Delay Time: | 27 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 9 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.65 O |
| Maximum Continuous Drain Current | 9 A |
| Maximum Power Dissipation - (mW) | 47000 |
| Typical Gate Charge @ 10V - (nC) | 15 |
| Typical Gate Charge @ Vgs - (nC) | 15@10V |
| Maximum Gate Source Voltage - (V) | 20 |
| Rds On - Drain-Source Resistance: | 1.54 Ohms |
| Maximum Drain Source Voltage - (V) | 500 |
| Maximum Gate Threshold Voltage - (V) | 3.5 |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Maximum Continuous Drain Current - (A) | 6.1 |
| Typical Input Capacitance @ Vds - (pF) | 342@100V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Drain Source Resistance - (mOhm) | 650@13V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |