IPD50P04P4L11ATMA1, Транзистор P-МОП, полевой, -40В, -50А, 58Вт, PG-TO252-3-313
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- Код товара
- 8070145936
- Артикул
- IPD50P04P4L11ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- XPD50P04
- Military
- No
- Packaging
- Tape and Reel
Цена по запросу
(от 147,47 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, P-канал, -40 В, -50 А, TO-252-3, Полярность транзистора: Канал P, Постоянный ток стока Id: -50 А, Напряжение источника стока Vds: -40 В, Сопротивление Rds(включено): 0,0082 Ом, Тестовое напряжение Rds(включено) Vgs: -10 В, Пороговое напряжение Vgs: -1,7 В, мощность, соответствие RoHS: Да
Технические параметры
| Brand: | Infineon Technologies |
| Series: | XPD50P04 |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 39 ns |
| Rise Time: | 9 ns |
| Вес, г | 0.56 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD50P04P4L-11 SP000671156 |
| Supplier Package | DPAK |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Process Technology | Single |
| Number of Channels: | 1 Channel |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation: | 58 W |
| Vgs - Gate-Source Voltage: | -16 V, +5 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 46 ns |
| Operating Temperature - (??C) | -55~175 |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Power Dissipation - (mW) | 58000 |
| Typical Gate Charge @ 10V - (nC) | 45 |
| Typical Gate Charge @ Vgs - (nC) | 45@10V |
| Maximum Gate Source Voltage - (V) | ??16 |
| Rds On - Drain-Source Resistance: | 17.2 mOhms |
| Maximum Drain Source Voltage - (V) | 40 |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Continuous Drain Current - (A) | 50 |
| Typical Input Capacitance @ Vds - (pF) | 3000@25V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Maximum Drain Source Resistance - (mOhm) | 10.6@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |