IPD50N06S214ATMA2, MOSFETs MOSFET_)40V 60V)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070209346
- Артикул
- IPD50N06S214ATMA2
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 19 ns
- Rise Time:
- 29 ns
- Вес, г
- 0.33
Цена по запросу
(от 182,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 19 ns |
| Rise Time: | 29 ns |
| Вес, г | 0.33 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPD50N06S2-14 SP001063624 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 136 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 30 ns |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 14.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |