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IPD25N06S4L30ATMA2, Транзисторы и сборки MOSFET TO252

IPD25N06S4L30ATMA2, Транзисторы и сборки MOSFET TO252

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Код товара
8061919020
Артикул
IPD25N06S4L30ATMA2
Бренд
INFINEON TECHNOLOGIES AG.
Tab
Tab
PPAP
Unknown
RoHS
Details
Brand
Infineon Technologies
Цена по запросу
(от 59 ₽)
Минимальный заказ: 2500 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор MOSFET N-CH 60V 25A Автомобильный 3-контактный (2+Tab) DPAK T/R

Технические параметры

TabTab
PPAPUnknown
RoHSDetails
BrandInfineon Technologies
Width6.22 mm
Height2.3 mm
Length6.5 mm
SeriesOptiMOS™-T2
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
TechnologySi
Вес, г0.8
PCB changed2
Part StatusActive
Unit Weight0.139332 oz
Channel ModeEnhancement
Channel TypeN
ManufacturerInfineon
Package TypeDPAK(TO-252)
ConfigurationSingle
Mounting TypeSurface Mount
Package / CaseTO-252-3
Part # AliasesIPD25N06S4L-30 IPD25N06S4L30XT SP001028636
Transistor Type1 N-Channel
Product CategoryPower MOSFET
Supplier PackageDPAK
Number of Channels1 Channel
Process TechnologyOptiMOS
Transistor MaterialSi
Transistor PolarityN-Channel
Factory Pack Quantity2500
Standard Package NameTO-252
Typical Fall Time (ns)2
Typical Rise Time (ns)1
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Drain Source Voltage60 V
Maximum Gate Threshold Voltage2.2V
Maximum Power Dissipation (mW)29000
Typical Gate Charge @ 10V (nC)12.5
Typical Gate Charge @ Vgs (nC)12.5 10V
Maximum Drain Source Resistance0.3 Ω
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)6
Maximum Continuous Drain Current25 A
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)15
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)935 25V
Maximum Drain Source Resistance (mOhm)30 10V

Техническая документация