OptiMOS™ -T2 N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014554083
- Артикул
- IPD25N06S4L30ATMA2
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- RoHS
- Details
- Brand
- Infineon Technologies
Цена по запросу
(от 200 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовой транзистор Infineon OptiMOS®-T2 имеет максимальное напряжение стока-истока 60 В, N-Ch, автомобильный MOSFET, в корпусе DPAK(TO-252).
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 6.22 mm |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Series | OptiMOS™-T2 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3 |
| Part # Aliases | IPD25N06S4L-30 IPD25N06S4L30XT SP001028636 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Number of Channels | 1 Channel |
| Process Technology | OptiMOS |
| Структура | 2 N-Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 1 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation (mW) | 29000 |
| Typical Gate Charge @ 10V (nC) | 12.5 |
| Typical Gate Charge @ Vgs (nC) | 12.5 10V |
| Maximum Drain Source Resistance | 0.3 Ω |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 25 |
| Typical Input Capacitance @ Vds (pF) | 935 25V |
| Maximum Drain Source Resistance (mOhm) | 30 10V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.023 Ом |