IPD12CN10NGATMA1, Транзистор МОП n-канальный, полевой, 100В, 67А, 125Вт, Ugs ±20В
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070105232
- Артикул
- IPD12CN10NGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- Case
- PG-TO252-3
- PPAP
- Unknown
- Brand:
- Infineon Technologies
Цена по запросу
(от 205,64 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 67A автомобильный 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| Case | PG-TO252-3 |
| PPAP | Unknown |
| Brand: | Infineon Technologies |
| EU RoHS | Compliant with Exemption |
| Series: | OptiMOS 2 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Unknown |
| Fall Time: | 8 ns |
| Lead Shape | Gull-wing |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 21 ns |
| Technology | OptiMOS™ 2 |
| Tradename: | OptiMOS |
| Вес, г | 0.39 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | PG-TO252-3 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 67A |
| Manufacturer: | Infineon |
| Mounting Type | SMD |
| Package/Case: | TO-252-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPD12CN10N G SP001127806 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Power Dissipation | 125Вт |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Process Technology | OptiMOS 2 |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 12.4mΩ |
| Drain-source voltage | 100V |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 21 |
| Pd - Power Dissipation: | 125 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 17 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 32 ns |
| Operating Temperature - (??C) | -55~175 |
| Id - Continuous Drain Current: | 67 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 49 |
| Typical Gate Charge @ Vgs (nC) | 49 10V |
| Forward Transconductance - Min: | 39 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 17 |
| Drain Source On State Resistance | 0.0093Ом |
| Maximum Continuous Drain Current | 67 A |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Power Dissipation - (mW) | 125000 |
| Typical Gate Charge @ 10V - (nC) | 49 |
| Typical Gate Charge @ Vgs - (nC) | 49@10V |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 9.3 mOhms |
| Линейка Продукции | OptiMOS 2 |
| Maximum Drain Source Voltage - (V) | 100 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Maximum Continuous Drain Current (A) | 67 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Typical Input Capacitance @ Vds (pF) | 3250 50V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Continuous Drain Current - (A) | 67 |
| Maximum Drain Source Resistance (mOhm) | 12.4 10V |
| Typical Input Capacitance @ Vds - (pF) | 3250@50V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Drain Source Resistance - (mOhm) | 12.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Непрерывный Ток Стока | 67А |
| Рассеиваемая Мощность | 125Вт |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 3В |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Стиль Корпуса Транзистора | TO-252(DPAK) |
| Максимальная Рабочая Температура | 175°C |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0093Ом |