IPD090N03LGATMA1, Power MOSFET, N Channel, 30 V, 40 A, 0.0075 ohm, TO-252 (DPAK), Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8550098027
- Артикул
- IPD090N03LGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- tab
- Case
- PG-TO252-3
- Brand:
- Infineon Technologies
- EU RoHS
- compliant with exemption
Цена по запросу
(от 141 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 40A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | tab |
| Case | PG-TO252-3 |
| Brand: | Infineon Technologies |
| EU RoHS | compliant with exemption |
| Series: | OptiMOS 3 |
| Mounting | surface mount |
| ECCN (US) | ear99 |
| Packaging | tape and reel |
| Pin Count | 3 |
| Fall Time: | 2.6 ns |
| Lead Shape | gull-wing |
| Rise Time: | 3 ns |
| Technology | OptiMOS™ 3 |
| Tradename: | OptiMOS |
| Вес, г | 1.43 |
| PCB changed | 2 |
| Part Status | active |
| Technology: | Si |
| Channel Mode | enhancement |
| Channel Type | n |
| Manufacturer | INFINEON TECHNOLOGIES |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-252 |
| Channel Mode: | Enhancement |
| Configuration | single |
| Drain current | 30A |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Kind of channel | enhanced |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD090N03L G SP000680636 |
| Product Category | power mosfet |
| Supplier Package | dpak |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 42W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Process Technology | optimos |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 9mΩ |
| Drain-source voltage | 30V |
| Transistor Polarity: | N-Channel |
| Standard Package Name | to-252 |
| Power Dissipation (Pd) | 42W |
| Typical Fall Time (ns) | 2.6 |
| Typical Rise Time (ns) | 3 |
| Особенности | - |
| Pd - Power Dissipation: | 42 W |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Typical Switch Charge (nC) | 3.9 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4 ns |
| Input Capacitance (Ciss@Vds) | 1.6nF@15V |
| Typical Turn-Off Delay Time: | 15 ns |
| Continuous Drain Current (Id) | 40A |
| Id - Continuous Drain Current: | 40 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 42000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 7.4 4.5v|15 10v |
| Forward Transconductance - Min: | 53 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 500 |
| Typical Turn-On Delay Time (ns) | 4 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.4 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Rds On - Drain-Source Resistance: | 7.5 mOhms |
| Typical Diode Forward Voltage (V) | 0.91 |
| Typical Gate to Drain Charge (nC) | 1.8 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 40 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1200 15v |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 9 10v |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 280 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 24 15v |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 75 |
| Пороговое напряжение на затворе | 2.2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 40 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 42 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 9mΩ@30A, 10V |