IPD068N10N3GATMA1, MOSFETs IFX FET 80 - 100V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004723276
- Артикул
- IPD068N10N3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 7.47mm
- Brand:
- Infineon Technologies
- Series
- IPD068N10N3 G
- Series:
- OptiMOS 3
Цена по запросу
(от 238,08 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор Infineon PG-TO-252-3 для поверxностного монтажа - это продукт нового поколения с сопротивлением сток-исток, равным 6.
Технические параметры
| Width | 7.47mm |
| Brand: | Infineon Technologies |
| Series | IPD068N10N3 G |
| Series: | OptiMOS 3 |
| Pin Count | 3 |
| Fall Time: | 9 ns |
| Rise Time: | 37 ns |
| Tradename: | OptiMOS |
| Вес, г | 0.46 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD068N10N3 G SP001127816 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 51 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Pd - Power Dissipation: | 150 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 51 nC 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 19 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 37 ns |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 90 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 54 S |
| Maximum Drain Source Resistance | 12.3 mΩ |
| Maximum Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance: | 6.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 150 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |