N-Channel MOSFET, 90 A, 80 V, 3-PIn DPAK InfIneon IPD053N08N3GATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070082436
- Артикул
- IPD053N08N3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 7.36mm
- Series
- IPD053N08N3 G
- Military
- No
- Packaging
- Tape and Reel
Цена по запросу
(от 224,06 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукция OptiMOS™ выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| Width | 7.36mm |
| Series | IPD053N08N3 G |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Вес, г | 0.42 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Supplier Package | DPAK |
| Process Technology | OptiMOS 3 |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | TO-252 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~175 |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 9.5 mΩ |
| Maximum Continuous Drain Current | 90 A |
| Maximum Power Dissipation - (mW) | 150000 |
| Typical Gate Charge @ 10V - (nC) | 52 |
| Typical Gate Charge @ Vgs - (nC) | 52@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 80 |
| Maximum Continuous Drain Current - (A) | 90 |
| Typical Input Capacitance @ Vds - (pF) | 3570@40V |
| Maximum Drain Source Resistance - (mOhm) | 5.3@10V |