Транзистор полевой IPB180P04P4L02ATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066162600
- Артикул
- IPB180P04P4L02ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 9.25mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS P
- Series:
- XPB180P04
Цена по запросу
(от 2 130 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канальные МОП-транзисторы Infineon OptiMOS™ разработаны таким образом, чтобы обеспечить расширенные возможности и высокое качество исполнения.
Технические параметры
| Width | 9.25mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS P |
| Series: | XPB180P04 |
| Pin Count | 7 |
| Fall Time: | 119 ns |
| Rise Time: | 28 ns |
| Вес, г | 1.81 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | D2PAK-7 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-7 |
| Part # Aliases: | IPB180P04P4L-02 SP000709460 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 286 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.3V |
| Pd - Power Dissipation: | 150 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 220 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -16 V, +5 V |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 32 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 146 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 180 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 3.9 mΩ |
| Maximum Continuous Drain Current | 180 A |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |