P-Channel MOSFET, 180 A, 40 V PG-TO263-7-3 IPB180P04P403ATMA2
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- Код товара
- 8030973766
- Артикул
- IPB180P04P403ATMA2
- Бренд
- INFINEON TECHNOLOGIES AG.
- Grade
- Automotive
- Brand:
- Infineon Technologies
- FET Type
- P-Channel
- Vgs (Max)
- ±20V
Цена по запросу
(от 1 038,10 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовой транзистор Infineon OptiMOS-P2 отличается наименьшими потерями мощности при переключении и проводимости при высочайшей тепловой эффективности.
Технические параметры
| Grade | Automotive |
| Brand: | Infineon Technologies |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 81 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 31 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | P |
| Package Type | PG-TO263-7-3 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | SMD |
| Product Type: | MOSFET |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-7, D2PAK(6 Leads+Tab) |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-7 |
| Part # Aliases: | IPB180P04P4-03 SP002325764 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 190 nC |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 150 W |
| Power Dissipation (Max) | 150W(Tc) |
| Supplier Device Package | PG-TO263-7-3 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 48 ns |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 72 ns |
| Drain to Source Voltage (Vdss) | 40 V |
| Id - Continuous Drain Current: | 180 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Continuous Drain Current | 180 A |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 17640 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 180A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 180 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |