IPB160N04S203ATMA4, 40V 160A 2.9mOhm@60A,10V 300W 4V@250uA N Channel 5300pF@25V 170nC@10V -55°C~+175°C@(Tj) TO-263-7-3 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070213573
- Артикул
- IPB160N04S203ATMA4
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- OptiMOS-T
- Pin Count
- 7
- Fall Time:
- 32 ns
Цена по запросу
(от 488,04 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка продуктов Infineon OptiMOS выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| Brand: | Infineon Technologies |
| Series | OptiMOS-T |
| Pin Count | 7 |
| Fall Time: | 32 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 45 ns |
| Вес, г | 2.1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-263-7 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-7 |
| Part # Aliases: | IPB160N04S2-03 SP001058962 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 170 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 27 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 52 ns |
| Id - Continuous Drain Current: | 160 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.0029 O |
| Maximum Continuous Drain Current | 160 A |
| Rds On - Drain-Source Resistance: | 2.9 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |