N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK IPB110N20N3LFATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8033014166
- Артикул
- IPB110N20N3LFATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Brand:
- Infineon Technologies
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 2 060 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейный полевой МОП-транзистор Infineon - это революционный подxод, позволяющий избежать компромисса между сопротивлением во включенном состоянии (RDS(on)) и возможностью работы в линейном режиме в области насыщения полевого МОП–транзистора улучшенного режима.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Infineon Technologies |
| EU RoHS | Compliant with Exemption |
| Series: | Optimos 5 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 26 ns |
| Rise Time: | 70 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB110N20N3LF SP001503864 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 76 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 26 |
| Typical Rise Time (ns) | 70 |
| Особенности | - |
| Pd - Power Dissipation: | 250 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 79 ns |
| Id - Continuous Drain Current: | 88 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 76 |
| Typical Gate Charge @ Vgs (nC) | 76@10V |
| Forward Transconductance - Min: | 16 S |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 79 |
| Rds On - Drain-Source Resistance: | 9.8 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 88 |
| Typical Input Capacitance @ Vds (pF) | 500@100V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (mOhm) | 11@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 88 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |