IPB090N06N3G, Транзистор
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- Код товара
- 9000504671
- Артикул
- IPB090N06N3G
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 9.25 mm
- Height
- 4.4 mm
Цена по запросу
(от 148 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60В 50А 9 Мом при 10 В, 50А 71 Вт N-канальные МОП-транзисторы TO-263-3
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 9.25 mm |
| Height | 4.4 mm |
| Length | 10 mm |
| Series | OptiMOS 3 |
| Fall Time | 5 ns |
| Packaging | Reel |
| Rise Time | 40 ns |
| Tradename | OptiMOS |
| Technology | Si |
| Вес, г | 1.84 |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Part # Aliases | IPB090N06N3GATMA1 IPB090N06N3GXT SP000398042 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 71 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 15 ns |
| Typical Turn-Off Delay Time | 20 ns |
| Id - Continuous Drain Current | 50 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Rds On - Drain-Source Resistance | 9 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |