IPB083N10N3GATMA1, Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001329188
- Артикул
- IPB083N10N3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- Width
- 9.45mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 318 ₽)
Минимальный заказ: 60 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 80A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Width | 9.45mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| EU RoHS | Compliant with Exemption |
| Series: | OptiMOS 3 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Unknown |
| Fall Time: | 8 ns |
| Rise Time: | 42 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB083N10N3 G SP000458812 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Process Technology | OptiMOS 3 |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 42 |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 31 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Forward Transconductance - Min: | 45 S |
| Maximum Drain Source Resistance | 15.1 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Rds On - Drain-Source Resistance: | 7.2 mOhms |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 2990@50V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 8.3@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 80 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 125 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |