IPB036N12N3GATMA1, MOSFETs N-Ch 120V 180A D2PAK-6 OptiMOS 3
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- Код товара
- 8004635509
- Артикул
- IPB036N12N3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 9.45mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 3
- Series:
- OptiMOS 3
Цена по запросу
(от 750,35 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 9.45mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| Series: | OptiMOS 3 |
| FET Type | N-Channel |
| Pin Count | 7 |
| Vgs (Max) | ±20V |
| Fall Time: | 21 ns |
| Rise Time: | 52 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | OptiMOS |
| Вес, г | 6 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK-7 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-263-7, D2PAK(6 Leads+Tab) |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-7 |
| Part # Aliases: | IPB036N12N3 G SP000675204 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 211 nC |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 300 W |
| Power Dissipation (Max) | 300W(Tc) |
| Supplier Device Package | PG-TO263-7 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 W |
| Typical Gate Charge @ Vgs | 158 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 35 ns |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
| Maximum Drain Source Voltage | 120 V |
| Typical Turn-Off Delay Time: | 76 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 120 V |
| Id - Continuous Drain Current: | 180 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 98 S |
| Maximum Drain Source Resistance | 3.6 mΩ |
| Maximum Continuous Drain Current | 180 A |
| Rds On - Drain-Source Resistance: | 2.9 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 120 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 180 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.2 mOhms |