IPB033N10N5LFATMA1, MOSFET транзистор PG-TO263-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070087530
- Артикул
- IPB033N10N5LFATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Series
- OptiMOS 5
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 604,95 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 159A 3-контактный(2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Series | OptiMOS 5 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 2.46 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 10 |
| Process Technology | OptiMOS 5 |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 48 |
| Typical Rise Time (ns) | 32 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Resistance (Ohm) | 60 |
| Maximum Gate Threshold Voltage | 4.1V |
| Maximum Power Dissipation (mW) | 179000 |
| Typical Gate Charge @ 10V (nC) | 102 |
| Typical Gate Charge @ Vgs (nC) | 102@10V |
| Maximum Drain Source Resistance | 0.0033 O |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 1100 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Continuous Drain Current | 170 A |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 6.9 |
| Typical Turn-Off Delay Time (ns) | 64 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.93 |
| Typical Gate to Drain Charge (nC) | 72 |
| Maximum Gate Threshold Voltage (V) | 4.1 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate Threshold Voltage (V) | 3.3 |
| Typical Gate to Source Charge (nC) | 3 |
| Typical Reverse Recovery Time (ns) | 58 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 159 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 350@50V |
| Typical Reverse Recovery Charge (nC) | 94 |
| Maximum Drain Source Resistance (mOhm) | 3.3@10V |
| Maximum Gate Source Leakage Current (nA) | 5000 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 636 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 13@50V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 23 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62 |