IPB027N10N3GATMA1, Транзистор МОП n-канальный, полевой, 100В, 120А, 300Вт, Ugs ±20В
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- Код товара
- 8070071092
- Артикул
- IPB027N10N3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 9.45mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 3
- Series:
- OptiMOS 3
Цена по запросу
(от 601,46 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 9.45mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| Series: | OptiMOS 3 |
| Pin Count | 3 |
| Fall Time: | 28 ns |
| Rise Time: | 58 ns |
| Tradename: | OptiMOS |
| Вес, г | 0.5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB027N10N3 G SP000506508 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 155 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 300 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 W |
| Typical Gate Charge @ Vgs | 155 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 34 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 84 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 120 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 94 S |
| Maximum Drain Source Resistance | 4.5 mΩ |
| Maximum Continuous Drain Current | 120 A |
| Rds On - Drain-Source Resistance: | 2.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |