IPB011N04NGATMA1, Транзистор МОП n-канальный, полевой, 40В, 180А, 250Вт, PG-TO263-7
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070141479
- Артикул
- IPB011N04NGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Width
- 9.45mm
- Series
- OptiMOS 3
Цена по запросу
(от 840 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукция OptiMOS™ выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 9.45mm |
| Series | OptiMOS 3 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.5 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK-7 |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Process Technology | OptiMOS |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 10 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 W |
| Typical Gate Charge @ Vgs | 188 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 250000 |
| Typical Gate Charge @ 10V (nC) | 188 |
| Typical Gate Charge @ Vgs (nC) | 188@10V |
| Maximum Drain Source Resistance | 1.1 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 40 |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 63 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 180 |
| Typical Input Capacitance @ Vds (pF) | 16000@20V |
| Maximum Drain Source Resistance (mOhm) | 1.1@10V |