IPA80R1K4CEXKSA2, 800V 3.9A 1.4Ohm@2.3A,10V 31W 3.9V@240uA N Channel TO-220-FP MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044549784
- Артикул
- IPA80R1K4CEXKSA2
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Series
- CoolMOS CE
- EU RoHS
- Compliant
Цена по запросу
(от 226 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 800V 3.9A с 3-контактным разъемом (3+Tab) для подключения к 220FP-трубке
Технические параметры
| Tab | Tab |
| PPAP | No |
| Series | CoolMOS CE |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 3.26 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 FP |
| Configuration | Single |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Maximum IDSS (uA) | 10 |
| Process Technology | CoolMOS CE |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 15 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Power Dissipation (mW) | 31000 |
| Typical Gate Charge @ 10V (nC) | 23 |
| Typical Gate Charge @ Vgs (nC) | 23 10V |
| Maximum Drain Source Resistance | 1.4 Ω |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Continuous Drain Current | 3.9 A |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 72 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 3.9 |
| Typical Input Capacitance @ Vds (pF) | 570 100V |
| Maximum Drain Source Resistance (mOhm) | 1400 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |