CoolMOS Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-220 IPA70R900P7SXKSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014564499
- Артикул
- IPA70R900P7SXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- CoolMOS
- FET Type
- N-Channel
- Packaging
- Tube
Цена по запросу
(от 230 ₽)
Минимальный заказ: 15 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Теxнология Infineon Cool MOS™ - это революционная теxнология для высоковольтныx силовыx МОП-транзисторов, разработанная в соответствии с принципом super junction (SJ) и впервые разработанная компанией Infineon Technologies.
Технические параметры
| Brand: | Infineon Technologies |
| Series | CoolMOS |
| FET Type | N-Channel |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | В±16V |
| Fall Time: | 31 ns |
| Packaging: | Tube |
| Rise Time: | 4.7 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon Technologies |
| Package Type | TO-220 FP |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 Full Pack |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | IPA70R900P7S SP001600942 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6.8 nC |
| Vgs(th) (Max) @ Id | 3.5V @ 60ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Silicon |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -40В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 1.1A, 10V |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 20.5 W |
| Power Dissipation (Max) | 20.5W(Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 400V |
| Maximum Drain Source Voltage | 700 V |
| Typical Turn-Off Delay Time: | 58 ns |
| Drain to Source Voltage (Vdss) | 700V |
| Id - Continuous Drain Current: | 6 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Drain Source Resistance | 0.9 Ω |
| Maximum Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance: | 740 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 211pF @ 400V |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 6A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Максимальное напряжение сток-исток Uси,В | 700 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |