IPA60R360P7SXKSA1, Транзистор: N-MOSFET; полевой
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- Код товара
- 8070058645
- Артикул
- IPA60R360P7SXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Series
- CoolMOSв„ў P7 ->
- Package
- Tube
Цена по запросу
(от 141,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 600В 9А (Tc) 22 Вт (Tc) со сквозным отверстием PG-TO220 в комплекте
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Series | CoolMOSв„ў P7 -> |
| Package | Tube |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 FP |
| REACH Status | REACH Unaffected |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4V @ 140ВµA |
| Base Product Number | IPA60R360 -> |
| Transistor Material | Si |
| Operating Temperature | -40В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.7A, 10V |
| Power Dissipation (Max) | 22W (Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Maximum Drain Source Voltage | 600 V |
| Drain to Source Voltage (Vdss) | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 0.36 Ω |
| Maximum Continuous Drain Current | 9 A |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Input Capacitance (Ciss) (Max) @ Vds | 555pF @ 400V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25В°C | 9A (Tc) |