Транзистор полевой IPA60R190C6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075239494
- Артикул
- IPA60R190C6
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type:
- 600 V CoolMOS C6 Power Transistor
- Brand:
- Infineon Technologies
- Series:
- CoolMOS C6
- Fall Time:
- 9 ns
Цена по запросу
(от 560 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | 600 V CoolMOS C6 Power Transistor |
| Brand: | Infineon Technologies |
| Series: | CoolMOS C6 |
| Fall Time: | 9 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Tradename: | CoolMOS |
| Вес, г | 1.95 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220FP-3 |
| Part # Aliases: | SP000621152 IPA6R19C6XK IPA60R190C6XKSA1 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 63 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 34 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 110 ns |
| Id - Continuous Drain Current: | 20.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |