IMWH170R650M1XKSA1, Infineon IMW N-Kanal, THT MOSFET 1700 V / 7,5 A, 4-Pin PG-TO247-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060878041
- Артикул
- IMWH170R650M1XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 22 ns
- Packaging:
- Tube
- Rise Time:
- 11 ns
Цена по запросу
(от 1 190 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 22 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Вес, г | 10 |
| Technology: | SiC |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-247-3 |
| Product Type: | SiC MOSFETS |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IMWH170R650M1 SP005920424 |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 8.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation: | 88 W |
| Typical Turn-On Delay Time: | 18 ns |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current: | 7.5 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.65 S |
| Vgs th - Gate-Source Threshold Voltage: | 5.7 V |