IMWH170R450M1XKSA1, TO-247-3 SIlIcon CarbIde FIeld Effect TransIstor (MOSFET) ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066807783
- Артикул
- IMWH170R450M1XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 23 ns
- Packaging:
- Tube
- Rise Time:
- 12 ns
Цена по запросу
(от 806,93 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 23 ns |
| Packaging: | Tube |
| Rise Time: | 12 ns |
| Вес, г | 9 |
| Technology: | SiC |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-247-3 |
| Product Type: | SiC MOSFETS |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IMWH170R450M1 SP005920422 |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 11.7 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation: | 111 W |
| Typical Turn-On Delay Time: | 21 ns |
| Typical Turn-Off Delay Time: | 26 ns |
| Id - Continuous Drain Current: | 10 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.9 S |
| Vgs th - Gate-Source Threshold Voltage: | 5.7 V |