IMW1 Type N-Channel MOSFET, 52 A, 1700 V Enhancement, 3-Pin TO-247 IMW120R045M1XKSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025716797
- Артикул
- IMW120R045M1XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type
- Power MOSFET
- Brand:
- Infineon Technologies
- Series
- IMW1
- Series:
- IMW120RXM1
Цена по запросу
(от 3 027,52 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Sic-МОП-транзистор Infineon CoolSiC™ напряжением 1200 В, 45 Мом в корпусе TO247-3 изготовлен на основе ультрасовременного полупроводникового процесса trench, оптимизированного для сочетания производительности и надежности.
Технические параметры
| Type | Power MOSFET |
| Brand: | Infineon Technologies |
| Series | IMW1 |
| Series: | IMW120RXM1 |
| Polarity | N |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Fall Time: | 13 ns |
| Packaging: | Tube |
| Rise Time: | 24 ns |
| Tradename: | CoolSiC |
| Вес, г | 1 |
| Technology: | SiC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IMW120R045M1 SP001346254 |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 228(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Number of Elements | 1 |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 1200(V) |
| Operating Temp Range | -55C to 175C |
| Transistor Polarity: | N-Channel |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 228 W |
| Continuous Drain Current | 52(A) |
| Gate-Source Voltage (Max) | 15(V) |
| Vgs - Gate-Source Voltage: | -10 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 9 ns |
| Maximum Drain Source Voltage | 1700 V |
| Typical Turn-Off Delay Time: | 17 ns |
| Id - Continuous Drain Current: | 52 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 11.1 S |
| Maximum Drain Source Resistance | 45 mΩ |
| Maximum Continuous Drain Current | 52 A |
| Rds On - Drain-Source Resistance: | 59 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Пороговое напряжение на затворе | -10 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 1700 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 52 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 59 mOhms |