IMT65R030M1HXUMA1, HSOF-8-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062271900
- Артикул
- IMT65R030M1HXUMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Вес, г
- 0.87
- Technology:
- SiC
- Subcategory:
- Transistors
Цена по запросу
(от 1 340,09 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Вес, г | 0.87 |
| Technology: | SiC |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | HSOF-8 |
| Product Type: | SiC MOSFETS |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IMT65R030M1H SP005716819 |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 49 nC |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 294 W |
| Vgs - Gate-Source Voltage: | -5 V, +23 V |
| Id - Continuous Drain Current: | 71 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 5.7 V |