IKW50N65ES5XKSA1, Транзистор IGBT, 650В, 60,5А, 137Вт, TO247-3

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070147327
- Артикул
- IKW50N65ES5XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- I(C)
- 50 A
- t(r)
- 9 nS
- V(CE)
- 650 V
- Brand:
- Infineon Technologies
Цена по запросу
(от 585 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор IGBT, 650В, 60,5А, 137Вт, TO247-3 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| I(C) | 50 A |
| t(r) | 9 nS |
| V(CE) | 650 V |
| Brand: | Infineon Technologies |
| P(tot) | 274 W |
| td(on) | 18 nS |
| Тип | IGBT |
| Package | TO247-3 |
| Series: | TRENCHSTOP 5 S5 |
| td(off) | 141 nS |
| Mounting | THT |
| V(CEsat) | 1.35 V |
| Bodydiode | YES |
| Packaging | TUBE |
| Pin Count | 3 |
| Automotive | NO |
| Packaging: | Tube |
| Technology | HighSpeed |
| Tradename: | TRENCHSTOP |
| Вес, г | 6.5 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | IGBTs |
| Energy Rating | 1.78mJ |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IKW50N65ES5 SP001319682 |
| Switching Speed | 30kHz |
| Gate Capacitance | 3100pF |
| Мощность | рассеиваемая(Pd)-274 Вт |
| Описание | IGBT Trench 650 V 80 A 274 W Through Hole PG-TO247-3 |
| Упаковка | TUBE, 30 шт. |
| Product Category: | IGBT Transistors |
| Number of Transistors | 1 |
| Pd - Power Dissipation: | 274 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 274 W |
| Способ монтажа | Through Hole |
| Maximum Gate Emitter Voltage | ±20V |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Collector Emitter Voltage | 650 V |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Maximum Continuous Collector Current | 80 A |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Диапазон рабочих температур | -40…+175 °С |
| MSL(Уровень чувствительности к влажности) | 1 |