IKW50N60H3FKSA1, (Обновлен дата код. Проверено.), Биполярный транзистор IGBT, 600 В, 100 А, 333 Вт
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- Код товара
- 8398371931
- Артикул
- IKW50N60H3FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Type
- FS(Field Stop)
- Brand
- Infineon Technologies
- Width
- 5.31 mm
Цена по запросу
(от 382 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор IGBT, 600 В, 100 А, 333 Вт
Технические параметры
| RoHS | Details |
| Type | FS(Field Stop) |
| Brand | Infineon Technologies |
| Width | 5.31 mm |
| Brand: | Infineon Technologies |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Series | IKW50N60 |
| Тип | IGBT |
| Packaging | Tube |
| Pin Count | 3 |
| Packaging: | Tube |
| Technology | Si |
| Вес, г | 7.5 |
| Technology: | Si |
| Unit Weight | 1.340411 oz |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TO-247 |
| Subcategory: | IGBTs |
| Корпус | PG-TO-247-3 |
| Configuration | Single |
| Energy Rating | 2.55mJ |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | IKW50N60H3FKSA1 IKW50N60H3XK SP000852244 |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Part # Aliases: | SP000852244 IKW5N6H3XK IKW50N60H3FKSA1 |
| Gate Capacitance | 2960pF |
| Product Category | IGBT Transistors |
| Упаковка | TUBE, 30 шт. |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity | 240 |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Collector Current (Ic) | 100A |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation | 333 W |
| Power Dissipation (Pd) | 333W |
| Pd - Power Dissipation: | 333 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 333 W |
| Turn?on Delay Time (Td(on)) | 23ns |
| Способ монтажа | Through Hole |
| Gate-Emitter Leakage Current | 100 nA |
| Input Capacitance (Cies@Vce) | - |
| Maximum Gate Emitter Voltage | 20 V |
| Turn?on Switching Loss (Eon) | 2.36mJ |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Total Gate Charge (Qg@Ic,Vge) | 315nC |
| Turn?off Delay Time (Td(off)) | 235ns |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Pulsed Collector Current (Icm) | 200A |
| Turn?off Switching Loss (Eoff) | 2.36mJ |
| Diode Reverse Recovery Time (Trr) | 130ns |
| Maximum Collector Emitter Voltage | 600 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 50 A |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage | 2.25 V |
| Continuous Collector Current Ic Max: | 50 A |
| Continuous Collector Current at 25 C | 100 A |
| Maximum Continuous Collector Current | 100 A |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Continuous Collector Current at 25 C: | 100 A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V, 50A |
| Потери на переключение, мДж | 2.36 |
| Максимальное напряжение КЭ (Vces), В | 600 |
| Максимальный ток коллектора (Ic), А | 100 |
| Транспортная упаковка: размер/кол-во | 60*50*50/300 |
| MSL(Уровень чувствительности к влажности) | 1 |