IKW40T120FKSA1, Trans IGBT Chip N-CH 1200V 75A 270W 3-Pin(3+Tab) TO-247 Tube
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- Код товара
- 8001293949
- Артикул
- IKW40T120FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-TO247-3
- RoHS
- Details
- Brand
- Infineon Technologies
- Series
- XKW40T120
Цена по запросу
(от 1 220 ₽)
Минимальный заказ: 16 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: IGBT, 1,2кВ, 40А, 270Вт, PG-TO247-3 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Case | PG-TO247-3 |
| RoHS | Details |
| Brand | Infineon Technologies |
| Series | XKW40T120 |
| Mounting | THT |
| Packaging | Tube |
| Technology | Si |
| Вес, г | 8.5 |
| Gate charge | 203nC |
| Manufacturer | Infineon |
| Turn-on time | 92ns |
| Configuration | Single |
| Turn-off time | 700ns |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | IKW40T120 IKW40T120XK SP000013940 |
| Kind of package | tube |
| Product Category | IGBT Transistors |
| Collector current | 40A |
| Power dissipation | 270W |
| Type of transistor | IGBT |
| Gate-emitter voltage | ±20V |
| Factory Pack Quantity | 240 |
| Pd - Power Dissipation | 270 W |
| Semiconductor structure | single transistor |
| Pulsed collector current | 105A |
| Collector-emitter voltage | 1.2kV |
| Gate-Emitter Leakage Current | 600 nA |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Features of semiconductor devices | integrated anti-parallel diode |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Continuous Collector Current Ic Max | 40 A |
| Collector-Emitter Saturation Voltage | 2.3 V |
| Continuous Collector Current at 25 C | 75 A |