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IKW40N120CS6XKSA1, IGBTs INDUSTRY

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Код товара
8004635478
Артикул
IKW40N120CS6XKSA1
Бренд
INFINEON TECHNOLOGIES AG.
I(C)
40 A
t(r)
39 nS
V(CE)
1200 V
Brand:
Infineon Technologies
Цена по запросу
(от 645,84 ₽)

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Описание

Описание Транзистор IGBT, 1,2кВ, 40А, 250Вт, TO247-3 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT

Технические параметры

I(C)40 A
t(r)39 nS
V(CE)1200 V
Brand:Infineon Technologies
P(tot)500 W
td(on)27 nS
PackageTO247-3
Series:Trenchstop IGBT6
td(off)315 nS
MountingThrough Hole
V(CEsat)1.85 V
BodydiodeYES
PackagingRail/Tube
Pin Count3
AutomotiveNO
Packaging:Tube
TechnologyIGBT6
Tradename:TRENCHSTOP
Вес, г5.96
RoHS StatusRoHS-conform
Technology:Si
Channel TypeN
Package TypeTO-247
Rad HardenedNo
Subcategory:IGBTs
ConfigurationSingle
Manufacturer:Infineon
Product Type:IGBT Transistors
Configuration:Single
Mounting Style:Through Hole
Package / Case:TO-247-3
Part # Aliases:IKW40N120CS6 SP001666622
Product Category:IGBT Transistors
Number of Transistors1
Collector Current (DC)80(A)
Pd - Power Dissipation:500 W
Maximum Power Dissipation500 W
Operating Temperature (Max)175C
Operating Temperature (Min)-40C
Maximum Gate Emitter Voltage20V
Gate to Emitter Voltage (Max)±20(V)
Gate-Emitter Leakage Current:600 nA
Maximum Gate Emitter Voltage:-20 V, +20 V
Maximum Operating Temperature:+175 C
Minimum Operating Temperature:-40 C
Maximum Collector Emitter Voltage1200 V
Collector- Emitter Voltage VCEO Max:1.2 kV
Continuous Collector Current Ic Max:80 A
Maximum Continuous Collector Current40 A
Operating Temperature ClassificationAUTOMOTIVEC
Collector-Emitter Saturation Voltage:1.85 V
Continuous Collector Current at 25 C:80 A
Factory Pack Quantity: Factory Pack Quantity:240

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