IKW25N120T2FKSA1, Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube

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- Код товара
- 8001292564
- Артикул
- IKW25N120T2FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.3 mm
- Height
- 20.95 mm
Цена по запросу
(от 596 ₽)
Минимальный заказ: 42 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор БТИЗ, биполярный, 1,2кВ, 50А, 349Вт, PG-TO247-3
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.3 mm |
| Height | 20.95 mm |
| Length | 15.9 mm |
| Series | TRENCHSTOP 2 |
| Packaging | Tube |
| Pin Count | 3 |
| Tradename | TRENCHSTOP |
| Technology | Si |
| Вес, г | 1 |
| Unit Weight | 1.340411 oz |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TO-247 |
| Configuration | Single |
| Energy Rating | 4.3mJ |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | IKW25N120T2FKSA1 IKW25N120T2XK SP000244960 |
| Gate Capacitance | 1600pF |
| Product Category | IGBT Transistors |
| Factory Pack Quantity | 240 |
| Pd - Power Dissipation | 349 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 349 W |
| Gate-Emitter Leakage Current | 200 nA |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Maximum Collector Emitter Voltage | 1200 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Continuous Collector Current at 25 C | 50 A |
| Maximum Continuous Collector Current | 50 A |