IKW25N120H3FKSA1, Транзистор с изолированным затвором (IGBT) TO247
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- Код товара
- 8065616470
- Артикул
- IKW25N120H3FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- I(C)
- 50 A
- RoHS
- Details
- t(r)
- 41 nS
- Brand
- Infineon Technologies
Цена по запросу
(от 544,07 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор IGBT, 1200 В, 50 А, 326 Вт
Технические параметры
| I(C) | 50 A |
| RoHS | Details |
| t(r) | 41 nS |
| Brand | Infineon Technologies |
| V(CE) | 1200 V |
| Brand: | Infineon Technologies |
| P(tot) | 326 W |
| Series | IKW25N120 |
| td(on) | 27 nS |
| Тип | IGBT |
| Package | TO247-3 |
| Series: | Trenchstop IGBT4 |
| td(off) | 277 nS |
| Mounting | THT |
| V(CEsat) | 2.4 V |
| Bodydiode | YES |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | NO |
| Packaging: | Tube |
| Technology | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 6.5 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Unit Weight | 1.340411 oz |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TO-247 |
| Subcategory: | IGBTs |
| Configuration | Single |
| Energy Rating | 4.3mJ |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | IKW25N120H3FKSA1 IKW25N120H3XK SP000674418 |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | SP000674418 IKW25N120H3 IKW25N120H3FKSA1 |
| Gate Capacitance | 1430pF |
| Product Category | IGBT Transistors |
| Мощность | рассеиваемая(Pd)-326 Вт |
| Описание | IGBT Trench Field Stop 1200 V 50 A 326 W Through Hole PG-TO247-3-1 |
| Упаковка | TUBE, 30 шт. |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity | 240 |
| Pd - Power Dissipation | 326 W |
| Pd - Power Dissipation: | 326 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 326 W |
| Gate-Emitter Leakage Current | 600 nA |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current: | 600 nA |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Collector Emitter Voltage | 1200 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Continuous Collector Current Ic Max | 25 A |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Continuous Collector Current at 25 C | 50 A |
| Maximum Continuous Collector Current | 50 A |
| Collector-Emitter Saturation Voltage: | 2.05 V |
| Continuous Collector Current at 25 C: | 50 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Диапазон рабочих температур | -40…+175 °С |
| Транспортная упаковка: размер/кол-во | 60*50*50/900 |