IKQ50N120CH3XKSA1, IGBT транзистор PG-TO247-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070123589
- Артикул
- IKQ50N120CH3XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- IGBT HighSpeed 3
- Mounting
- Through Hole
- Packaging
- Rail/Tube
Цена по запросу
(от 1 256,64 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор IGBT 1200В 100A 652Вт
Технические параметры
| Brand: | Infineon Technologies |
| Series: | IGBT HighSpeed 3 |
| Mounting | Through Hole |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Packaging: | Tube |
| Tradename: | TRENCHSTOP |
| Вес, г | 11.87 |
| Technology: | Si |
| Channel Type | N |
| Package Type | TO-247 |
| Rad Hardened | No |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | Infineon |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IKQ50N120CH3 SP001272708 |
| Product Category: | IGBT Transistors |
| Collector Current (DC) | 100(A) |
| Pd - Power Dissipation: | 652 W |
| Operating Temperature (Max) | 175C |
| Operating Temperature (Min) | -40C |
| Gate to Emitter Voltage (Max) | ±20(V) |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Continuous Collector Current Ic Max: | 100 A |
| Operating Temperature Classification | AUTOMOTIVEC |
| Collector-Emitter Saturation Voltage: | 2 V |
| Continuous Collector Current at 25 C: | 100 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |