IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3
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- Код товара
- 8014554575
- Артикул
- IHW40N120R5XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- TO247-3
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Series
- TrenchStopв„ў ->
Цена по запросу
(от 1 012,13 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор Infineon с изолированным затвором и мощным монолитным диодом в корпусе с низким прямым напряжением предназначен для мягкой коммутации.
Технические параметры
| Case | TO247-3 |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Series | TrenchStopв„ў -> |
| Package | Tube |
| Mounting | Through Hole |
| IGBT Type | Trench Field Stop |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Input Type | Standard |
| Technology | TRENCHSTOP™ RC |
| Вес, г | 1 |
| Gate Charge | 310nC |
| Power - Max | 394W |
| RoHS Status | ROHS3 Compliant |
| Channel Type | N |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | PG-TO247-3 |
| REACH Status | REACH Unaffected |
| Rad Hardened | No |
| Configuration | Single |
| Mounting Type | Through Hole |
| Turn-off time | 440ns |
| Package / Case | TO-247-3 |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Kind of package | tube |
| Switching Energy | 1.6mJ (off) |
| Collector current | 40A |
| Power dissipation | 197W |
| Type of transistor | IGBT |
| Base Product Number | IHW40N120 -> |
| Gate-emitter voltage | ±20V |
| Operating Temperature | -40В°C ~ 175В°C (TJ) |
| Td (on/off) @ 25В°C | -/420ns |
| Collector Current (DC) | 80(A) |
| Supplier Device Package | PG-TO247-3 |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 40A |
| Pulsed collector current | 120A |
| Collector-emitter voltage | 1.2kV |
| Maximum Power Dissipation | 394 W |
| Operating Temperature (Max) | 175C |
| Operating Temperature (Min) | -40C |
| Maximum Gate Emitter Voltage | ±20 V, ±25 V |
| Gate to Emitter Voltage (Max) | ±20(V) |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Features of semiconductor devices | reverse conducting IGBT(RC-IGBT) |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 80 A |
| Operating Temperature Classification | Automotive |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |