IGB30N60H3, IGBTs 600v Hi-Speed SW IGBT
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- Код товара
- 8004723209
- Артикул
- IGB30N60H3
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Brand:
- Infineon Technologies
- Series
- IGB30N60
Цена по запросу
(от 610 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon IGB30N60H3ATMA1 IGBT, 30 А, 600 В, 3+контактный разъем D2PAK (TO-263)
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Brand: | Infineon Technologies |
| Series | IGB30N60 |
| Series: | HighSpeed 3 |
| Packaging | Reel |
| Packaging: | Reel, Cut Tape |
| Technology | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 2.2 |
| Technology: | Si |
| Manufacturer | Infineon |
| Subcategory: | IGBTs |
| Manufacturer: | Infineon |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Part # Aliases | IGB30N60H3ATMA1 IGB30N60H3XT SP000852240 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IGB3N6H3XT SP000852240 IGB30N60H3ATMA1 |
| Product Category | IGBT Transistors |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation: | 187 W |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Continuous Collector Current at 25 C: | 60 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |