IAUC80N04S6N036ATMA1, 40V 80A 3.68mOhm@40A,10V 50W 3V@18uA 1 N-Channel TDSON-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070062394
- Артикул
- IAUC80N04S6N036ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Pin Count
- 8
- Fall Time:
- 3 ns
- Rise Time:
- 2 ns
Цена по запросу
(от 108,27 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon оснащен МОП-транзистором OptiMOS power MOSFET для автомобильныx применений, логическим уровнем N-канального режима усиления и соответствует стандарту AEC Q101.
Технические параметры
| Brand: | Infineon Technologies |
| Pin Count | 8 |
| Fall Time: | 3 ns |
| Rise Time: | 2 ns |
| Вес, г | 0.37 |
| Technology: | Si |
| Channel Type | N |
| Package Type | SuperSO8 5x6 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | IAUC80N04S6N036 SP001700162 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 50 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 3 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 6 ns |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance: | 3.47 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |