IAUC100N04S6L020ATMA1, 40V 100A 2.04mOhm@50A,10V 75W 2V@32uA N Channel TDSON-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070052200
- Артикул
- IAUC100N04S6L020ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Pin Count
- 8
- Fall Time:
- 8 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 126,77 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon оснащен МОП-транзистором OptiMOS power MOSFET для автомобильныx применений, логическим уровнем N-канального режима усиления и соответствует стандарту AEC Q101.
Технические параметры
| Brand: | Infineon Technologies |
| Pin Count | 8 |
| Fall Time: | 8 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 2 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | N |
| Package Type | SuperSO8 5x6 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | IAUC100N04S6L020 SP001790494 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 75 W |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance: | 2.26 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |