HUF75339P3, Транзистор: N-MOSFET, полевой, 55В, 75А, 200Вт, TO220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048171642
- Артикул
- HUF75339P3
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 4.83mm
Цена по запросу
(от 321 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
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Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 4.83mm |
| Brand: | onsemi/Fairchild |
| Series | UltraFET |
| EU RoHS | Compliant with Exemption |
| Series: | HUF75339P3 |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 25 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 60 ns |
| Tradename: | UltraFET |
| Вес, г | 1.95 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | HUF75339P3_NL |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 130 nC |
| Process Technology | UltraFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 60 |
| Pd - Power Dissipation: | 200 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 200 W |
| Typical Gate Charge @ Vgs | 110 nC @ 20 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 55 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 75 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 110@20V |
| Maximum Drain Source Resistance | 12 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Continuous Drain Current | 75 A |
| Maximum Drain Source Voltage (V) | 55 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Rds On - Drain-Source Resistance: | 12 mOhms |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 75 |
| Typical Input Capacitance @ Vds (pF) | 2000@25V |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Maximum Drain Source Resistance (mOhm) | 12@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |