Транзистор HUF75329D3ST ON SEMICONDUCTOR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072318972
- Артикул
- HUF75329D3ST
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- Series:
- HUF75329D3S
- Fall Time:
- 33 ns
Цена по запросу
(от 27 ₽)
Минимальный заказ: 69 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 55В 20A
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Series: | HUF75329D3S |
| Fall Time: | 33 ns |
| Rise Time: | 30 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Part # Aliases: | HUF75329D3ST_NL |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 128 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 26 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |