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HN4C51J(TE85L,F), 120V 300mW 200@2mA,6V 100mA NPN SC-74A(SOT-753) BIpolar (BJT) ROHS

HN4C51J(TE85L,F), 120V 300mW 200@2mA,6V 100mA NPN SC-74A(SOT-753) BIpolar (BJT) ROHS

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Код товара
8070161504
Артикул
HN4C51J(TE85L,F)
Бренд
Toshiba
RoHS
Details
Brand
Toshiba
Brand:
Toshiba
Series
HN4C51
Цена по запросу
(от 180 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярные транзисторы - BJT Trans LFreq 120V NPN NPN 0.1A

Технические параметры

RoHSDetails
BrandToshiba
Brand:Toshiba
SeriesHN4C51
PackagingCut Tape
Вес, г1
Technology:Si
Unit Weight0.000494 oz
ManufacturerToshiba
Subcategory:Transistors
ConfigurationDual
Manufacturer:Toshiba
Package/Case:SOT-25-5
Product Type:BJTs-Bipolar Transistors
Configuration:Dual
Mounting StyleSMD/SMT
Package / CaseSOT-25-5
Mounting Style:SMD/SMT
Product CategoryBipolar Transistors-BJT
Product Category:Bipolar Transistors-BJT
Transistor PolarityNPN
Transistor Polarity:NPN
Factory Pack Quantity3000
Factory Pack Quantity:3000
Pd - Power Dissipation300 mW
DC Current Gain hFE Max700
Pd - Power Dissipation:300 mW
DC Current Gain hFE Max:700
Gain Bandwidth Product fT100 MHz
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:5 V
Collector- Base Voltage VCBO120 V
Continuous Collector Current100 mA
Maximum DC Collector Current100 mA
Collector- Base Voltage VCBO:120 V
Continuous Collector Current:100 mA
Maximum DC Collector Current:100 mA
DC Collector/Base Gain hfe Min200
Maximum Operating Temperature:+150 C
DC Collector/Base Gain hFE Min:200
Collector- Emitter Voltage VCEO Max120 V
Collector- Emitter Voltage VCEO Max:120 V
Collector-Emitter Saturation Voltage0.3 V
Collector-Emitter Saturation Voltage:300 mV

Техническая документация