GT50JR22(S1WLD,E,S), TO-3P-3 IGBTs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017660267
- Артикул
- GT50JR22(S1WLD,E,S)
- Бренд
- Toshiba
- Mounting
- Through Hole
- Packaging
- Magazine
- Pin Count
- 3+Tab
- Вес, г
- 4.94
Цена по запросу
(от 500 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
TO-3P-3 IGBTs ROHS
Технические параметры
| Mounting | Through Hole |
| Packaging | Magazine |
| Pin Count | 3+Tab |
| Вес, г | 4.94 |
| Channel Type | N |
| Package Type | TO-3PN |
| Rad Hardened | No |
| Configuration | Single |
| Mounting Type | Through Hole |
| Switching Speed | 1MHz |
| Collector Current (DC) | 50(A) |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 600(V) |
| Maximum Power Dissipation | 230 W |
| Operating Temperature (Max) | 175C |
| Operating Temperature (Min) | -55C |
| Maximum Gate Emitter Voltage | ±25V |
| Gate to Emitter Voltage (Max) | '±25(V) |
| Maximum Operating Temperature | +175 °C |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 50 A |
| Operating Temperature Classification | Military |