GT50JR21(STA1,E,S), IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ
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- Код товара
- 8062913005
- Артикул
- GT50JR21(STA1,E,S)
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series:
- GT50JR21
- Packaging:
- Tube
- Вес, г
- 4.6
Цена по запросу
(от 1 510 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Series: | GT50JR21 |
| Packaging: | Tube |
| Вес, г | 4.6 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | Toshiba |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-3PN-3 |
| Product Category: | IGBT Transistors |
| Pd - Power Dissipation: | 230 W |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -25 V, +25 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Continuous Collector Current Ic Max: | 100 A |
| Collector-Emitter Saturation Voltage: | 1.45 V |
| Continuous Collector Current at 25 C: | 50 A |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |