GNP1150TCA-ZE2, ROHM Gate-Ansteuerungsmodul 650V 8-Pin DFN8080AK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064092062
- Артикул
- GNP1150TCA-ZE2
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 8.3 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 5.3 ns
Цена по запросу
(от 756,06 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 8.3 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 5.3 ns |
| Technology: | GaN |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN8080AK-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.7 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 62.5 W |
| Vgs - Gate-Source Voltage: | -10 V, +6 V |
| Typical Turn-On Delay Time: | 4.7 ns |
| Typical Turn-Off Delay Time: | 6.2 ns |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Rds On - Drain-Source Resistance: | 195 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |