GNP1070TC-ZE2,Gallium Nitride (GaN) Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8046395383
- Артикул
- GNP1070TC-ZE2
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 8.7 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 6.9 ns
Цена по запросу
(от 1 920 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 8.7 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 6.9 ns |
| Вес, г | 0.012 |
| Technology: | GaN |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.2 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 56 W |
| Vgs - Gate-Source Voltage: | -10 V, +6 V |
| Typical Turn-On Delay Time: | 5.9 ns |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +150 C |
| Rds On - Drain-Source Resistance: | 98 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |