G3R60MT07K, TO-247-4 SIlIcon CarbIde FIeld Effect TransIstor (MOSFET) ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070115072
- Артикул
- G3R60MT07K
- Бренд
- GENESIC SEMICONDUCTOR
- Type:
- SiC MOSFET
- Brand:
- GeneSiC Semiconductor
- Product:
- MOSFETs
- Packaging:
- Tube
Цена по запросу
(от 2 031,43 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | SiC MOSFET |
| Brand: | GeneSiC Semiconductor |
| Product: | MOSFETs |
| Packaging: | Tube |
| Вес, г | 8.8 |
| Technology: | SiC |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | GeneSiC Semiconductor |
| Package/Case: | TO-247-4 |
| Product Type: | SiC MOSFETS |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 47 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 127 W |
| Vgs - Gate-Source Voltage: | -5 V, +15 V |
| Id - Continuous Drain Current: | 37 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 750 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |